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M58BW016FB7D150T TR

Part No M58BW016FB7D150T TR
Manufacturer Micron Technology Inc.
Catalog Unclassified Memory
Description IC FLASH 16MBIT PARALLEL DIE / FLASH - NOR Memory IC 16Mb (512K x 32) Parallel 70 ns
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs)>Memory>Memory
Manufacturer Micron Technology Inc.
Packaging Reel - TR
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 16Mb (512K x 32)
Memory Interface Parallel
Access Time 70 ns
Voltage - Supply 2.7V ~ 3.6V
Base Product Number M58BW016
RoHS Status ROHS3 Compliant
MSL Level 3 (168 Hours)
ECCN OBSOLETE
HTSUS 0000.00.0000
Other Part Number M58BW016FB7D150T TR-ND,M58BW016FB7D150TTR
Standard Package 2,000
Win Source Part Number 1321716-M58BW016FB7D150T TR
Ultra Librarian 3D Model Ultra Librarian M58BW016FB7D150T TR CAD Model

Description

The Micron M58BW016FB7D150T TR is a 16 Mbit (2 Mb x 8 or 1 Mb x 16) Parallel Flash memory device. It's designed for embedded systems requiring non-volatile storage for code and data. Its parallel interface allows for fast read and write operations, making it suitable for applications where quick access to stored information is crucial.

Applications

  • Embedded Systems: Used for storing firmware and configuration data in embedded systems.
  • Industrial Control: Employed in industrial automation equipment for storing program code and calibration data.
  • Networking Equipment: Integrated into routers, switches, and other networking devices for storing boot code and system configurations.
  • Medical Devices: Utilized in medical equipment for storing application code and patient data.
  • Automotive Electronics: Applied in automotive control units (ECUs) for storing software and calibration parameters.
  • Consumer Electronics: Deployed in various consumer electronic devices for storing boot code and user settings.

Features

  • Capacity: 16 Mbit (2 Mb x 8 or 1 Mb x 16 configurable)
  • Interface: Parallel interface for fast data transfer
  • Supply Voltage: Operates on a single 2.7V to 3.6V power supply
  • Access Time: 150 ns access time for quick read operations
  • Sector Erase: Supports sector erase for efficient memory management
  • Write Protection: Hardware write protection to prevent accidental data corruption
  • Operating Temperature: Industrial temperature range (-40°C to +85°C)

Benefits

  • Non-Volatile Storage: Retains data even when power is removed, ensuring that critical information is preserved.
  • Fast Access Time: Enables quick read operations, improving system performance.
  • Sector Erase: Allows for efficient memory management by enabling the selective erasure of memory sectors.
  • Write Protection: Prevents accidental data corruption, enhancing system reliability.
  • Wide Operating Temperature Range: Suitable for use in harsh environments.
  • Cost-Effective: Provides a cost-effective solution for non-volatile storage requirements.

Additional Details

The M58BW016FB7D150T TR is designed to meet the requirements of embedded systems requiring reliable non-volatile storage. It is supported by standard programming tools and interfaces, simplifying integration into existing designs. The device also features low power consumption, making it suitable for battery-powered applications. With its robust performance and reliability, the Micron M58BW016FB7D150T TR is a dependable solution for a wide range of embedded storage needs.

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