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MT29F128G08CBCEBL05B3WC1-M

Part No MT29F128G08CBCEBL05B3WC1-M
Manufacturer Micron Technology Inc.
Catalog IT infrastructure Memory
Description 128Gb NAND Flash MLC Wafer
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1451880-MT29F128G08CBCEBL05B3WC1-M
Manufacturer Micron Technology Inc.
Package Bulk
Product Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 128Gbit
Memory Organization 16G x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Ultra Librarian 3D Model Ultra Librarian MT29F128G08CBCEBL05B3WC1-M CAD Model

Description

The MT29F128G08CBCEBL05B3WC1-M by Micron is an advanced 128Gb NAND Flash MLC (Multi-Level Cell) memory wafer designed for a wide array of storage applications. This product offers the impressive storage capacity of 128Gb, making it highly suited for use in solid-state drives (SSDs), high-end smartphones, tablets, and other devices that require substantial data storage capabilities. Unlike traditional packaged NAND flash memory, this MLC wafer format provides manufacturers with the flexibility to create customized memory solutions, catering to specific product designs and requirements. The use of MLC technology allows for storing more bits of information in each cell compared to single-level cell (SLC) counterparts, effectively balancing cost and performance for mass storage applications. Micron's expertise in NAND flash memory is showcased in this product's high data transfer rates, durability, and efficient power consumption. Furthermore, it incorporates advanced error correction code (ECC) and wear-leveling algorithms to enhance the reliability and lifespan of the memory, making the MT29F128G08CBCEBL05B3WC1-M an excellent choice for manufacturers seeking high-capacity, high-performance storage solutions.

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