The MT29F2G08ABAFAH4-IT:E is a NAND Flash memory device manufactured by Micron Technology Inc. This component is designed for high-density storage in various applications, offering a balance of performance, reliability, and cost-effectiveness. It's often used in embedded systems, consumer electronics, and industrial applications where non-volatile memory is required.

Applications

• Embedded systems
• Solid-state drives (SSDs)
• USB flash drives
• Memory cards
• Digital cameras

Features

• 2Gb (268,435,456 x 8) capacity
• Supply voltage: 1.8V or 3.3V
• Page size: (2K + 64) Bytes
• Block size: (128K + 4K) Bytes
• High program/erase cycles
• Data retention: 10 years
• RoHS compliant

Benefits

• High-density storage in a compact package
• Fast read and write speeds
• Low power consumption
• Enhanced data integrity with ECC
• Long-term data retention
• Suitable for industrial and commercial applications

Additional Details

The MT29F2G08ABAFAH4-IT:E NAND Flash memory utilizes advanced process technology to achieve high storage density and performance. It features a page-based architecture for efficient data management and supports various operations such as read, program, and erase. Error correction code (ECC) is integrated to ensure data integrity and reliability. The operating temperature range typically spans from -40°C to 85°C, making it suitable for a wide range of environmental conditions. This memory chip is commonly used for storing firmware, operating systems, and user data in embedded systems and storage devices.