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Same model may have multiple batches, images only for reference.
MT53E256M16D1FW-046 WT:B
Same model may have multiple batches, images only for reference.

MT53E256M16D1FW-046 WT:B

Part No MT53E256M16D1FW-046 WT:B
Manufacturer Micron Technology Inc.
Catalog Memory
Description LPDDR4 4G 256MX16 FBGA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Micron Technology Inc.
Series -
Package Box
Product Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR4X
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 2.133 GHz
Write Cycle Time - Word, Page 18ns
Access Time 3.5 ns
Voltage - Supply 1.06V ~ 1.17V
Temperature Range - Operating -30°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 200-TFBGA
Supplier Device Package 200-TFBGA (10x14.5)
REACH Status REACH Unaffected
Win Source Part Number 1371416-MT53E256M16D1FW-046 WT:B
Ultra Librarian 3D Model Ultra Librarian MT53E256M16D1FW-046 WT:B CAD Model

Description

Micron Technology Inc. manufactures the 4Gbit Mobile LPDDR4X SDRAM memory integrated circuit (IC).

  • Voltage Supply Range: 1.06V to 1.17V
  • Memory Type: Volatile
  • Temperature Range: -30°C to 85°C
  • Package: 200-TFBGA
  • Size: 10x14.5
  • Memory Format: DRAM
  • Organization: 256M x 16
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time: 18ns
  • Access Time: 3.5ns
  • Commonly Used In: memory applications

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