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Same model may have multiple batches, images only for reference.
2N3960 Real Image
Same model may have multiple batches, images only for reference.

2N3960

Part No 2N3960
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description Chip Type 2C3960 Geometry 0003 Polarity NPN | TRANS NPN 12V TO-18
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 12V
Vce Saturation (Maximum) at Ib, Ic 300mV at 3mA, 30mA
Current - Collector Cutoff (Maximum) 10μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 60 at 10mA, 1V
Maximum Power 400mW
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18 (TO-206AA)
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1123822-2N3960
Manufacturer Homepage www.semicoa.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N3960 CAD Model

Description

The 2N3960 is an electronic component manufactured by Microsemi Corporation. Microsemi Corporation 2N3960.

  • Type: High-Performance NPN Transistor
  • Maximum Voltage: 12V
  • Maximum Current: 30mA
  • Application: Low-Power Applications
  • Features: High Current Gain, Low Noise, Low Leakage Current
  • Benefits: Efficient Solutions for Various Electronic Systems

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