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IRF7421D1TRPBF

Part No IRF7421D1TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.8A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 4.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 102703-IRF7421D1TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7421D1TRPBF CAD Model

Description

The Infineon Technologies IRF7421D1TRPBF is an N-channel MOSFET with a Schottky diode (isolated) feature.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.8A (Ta)
  • Suitable for: use in applications that require high power dissipation
  • Category: Discrete Semiconductor Products
  • Popularity: medium popularity
  • Supply and Demand Status: balance
  • Status: obsolete (EOL)
  • Estimated EOL Date: not available

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5939 $59.3900
240+ $0.4874 $116.9760
370+ $0.4722 $174.7140
510+ $0.4569 $233.0190
655+ $0.4417 $289.3135
880+ $0.3959 $348.3920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,650 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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