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2N6849

Name: 2N6849
Brand: Microsemi Corporation
SKU: 541519
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	2N6849
Manufacturer	Microsemi Corporation
Catalog	FETs - Single
Description	P.CHANNEL POWER MOSFETs \| MOSFET P-CH 100V TO-205AF TO-39
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Microsemi Corporation
Packaging	Bulk
Status	Obsolete
Transistor Polarity	P-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	100V
Id - Continuous Drain Current	6.5A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	320mOhm at 6.5A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	34.8nC at 10V
Gate Source Voltage (Maximum)	±20V
Power Dissipation (Maximum)	800mW, 25W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-39
Manufacturer Package	TO-205AF Metal Can
Manufacturer Pack Quantity	1
MSL Level	1 (Unlimited)
Win Source Part Number	1124207-2N6849
Manufacturer Homepage	www.semelab.co.uk
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian 2N6849 CAD Model

Alternative Products

Description

The Microsemi Corporation MOSFET is a P-Channel transistor with a maximum drain-source breakdown voltage of 100V and continuous drain current of 6.5A.

Maximum Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 6.5A
Maximum Gate-Source Voltage: ±20V
Gate-Source Voltage Threshold: 4V @ 250μA
FET Feature: Not specified
Package: TO-39
Power Dissipation: 800mW and 25W
Status: Obsolete
Drive Voltage: 10V
Maximum Rds On: 320mOhm @ 6.5A and 10V
Gate Charge Qg: 34.8nC @ 10V

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