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Same model may have multiple batches, images only for reference.
APT10M11B2VFRG Real Image
Same model may have multiple batches, images only for reference.

APT10M11B2VFRG

Part No APT10M11B2VFRG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A T-MAX / N-CHANNEL ENHANCEMENT MODE POWER MOSFETS TO-247
Datasheet
APT10M11B2VFRG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS V
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 450nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 10300pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 520W (Tc)
Rds On (Maximum) @ Id, Vgs 11 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX
Package TO-247-3 Variant
Win Source Part Number 768661-APT10M11B2VFRG
Popularity Medium
Supply and Demand Status Limited
Family Name APT10M11B2VFRG
Introduction Date December 30, 1999
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian APT10M11B2VFRG CAD Model

Description

The Microsemi Corporation APT10M11B2VFRG is a POWER MOS V MOSFET that provides an efficient and reliable solution for electronic components.

  • Mounting Type: Through-hole
  • Temperature Range (TJ): -55°C ~ 150°C
  • Continuous Drain Current @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Package: DO-247-3 Variant
  • Gate Charge (Qg) (Maximum) @ Vgs: 450nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 10300pF @ 25V
  • ECCN: EAR99
  • Popularity: Medium

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