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APT11N80KC3G

Part No APT11N80KC3G
Manufacturer Microsemi Corporation
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 800V 11A TO220
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1585 pF @ 25 V
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 [K]
Package / Case TO-220-3
Ultra Librarian 3D Model Ultra Librarian APT11N80KC3G CAD Model

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