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Same model may have multiple batches, images only for reference.
APT28M120L Real Image
Same model may have multiple batches, images only for reference.

APT28M120L

Part No APT28M120L
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1200V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 300nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 9670pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1135W (Tc)
Rds On (Maximum) @ Id, Vgs 530 mOhm @ 14A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264 [L]
Package TO-264-3, TO-264AA
Win Source Part Number 1146695-APT28M120L
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT28M120L
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT28M120L CAD Model

Description

The Microsemi Corporation APT28M120L is a MOSFET transistor that is part of the POWER MOS 8 series. Bold the product name (e.g., BAV99S,135 → APT28M120L) and manufacturer (e.g., Nexperia USA Inc. → Microsemi Corporation).

  • Series: POWER MOS 8
  • Mounting Type: Through Hole
  • Current: 29A @ 25°C
  • Voltage Breakdown: 1200V
  • Power Dissipation: 1135W @ Tc
  • Package: TO-264-3, TO-264AA

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