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Same model may have multiple batches, images only for reference.
APT30GT60KR Real Image
Same model may have multiple batches, images only for reference.

APT30GT60KR

Part No APT30GT60KR
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 64A 250W TO220
Datasheet
APT30GT60KR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 64A
Pulsed Collector Current 110A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 30A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 525μJ (on), 600μJ (off)
Input Type Standard
Gate Charge 145nC
Turn-on and Turn-off delay time 12ns/225ns
Testing Conditions 400V, 30A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 [K]
Win Source Part Number 051456-APT30GT60KR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT30GT60KR CAD Model

Description

APT30GT60KR

The APT30GT60KR is a robust insulated gate bipolar transistor (IGBT) designed for high-power electronics applications. With its high efficiency and fast switching capabilities, this component is ideal for use in demanding environments where reliable performance and long-lasting durability are essential.

  • High Efficiency: This IGBT offers low conduction and switching losses, making it highly efficient in performance.
  • Robust Construction: Designed to withstand high voltages and currents, ensuring reliability in demanding applications.
  • Fast Switching: Enhances performance in high-frequency applications.

Applications/Projects:

  • Motor Drives
  • Inverter Systems
  • Power Supply Units

Additional Details: The APT30GT60KR is equipped with a Kelvin emitter to optimize circuit performance by reducing gate-driven loop inductance.

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