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Same model may have multiple batches, images only for reference.
APT43M60B2 Real Image
Same model may have multiple batches, images only for reference.

APT43M60B2

Part No APT43M60B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Datasheet
APT43M60B2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 215nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8590pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 780W (Tc)
Rds On (Maximum) @ Id, Vgs 150 mOhm @ 21A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX [B2]
Package TO-247-3 Variant
Win Source Part Number 1146778-APT43M60B2
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT43M60B2
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT43M60B2 CAD Model

Description

The Microsemi Corporation APT43M60B2 is a POWER MOS 8 series N-Channel enhancement mode MOSFET.

  • Maximum Drain-Source Voltage: 600V
  • Continuous Drain Current: 45A (Tc) @ 25°C
  • Maximum On-Resistance: 150 mOhm @ 21A and 10V gate-source voltage
  • Package: TO-247-3 variant
  • Maximum Power Dissipation: 780W (Tc)
  • Gate Charge (Qg): 215nC @ 10V gate-source voltage
  • Input Capacitance (Ciss): 8590pF @ 25V drain-source voltage
  • Vgs(th): 5V @ 2.5mA
  • Maximum Vgs: ±30V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Popularity: Popular
  • Supply and Demand Status: Limited
  • Estimated EOL Date: 2024

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