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Same model may have multiple batches, images only for reference.
APT56F50B2 Real Image
Same model may have multiple batches, images only for reference.

APT56F50B2

Part No APT56F50B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel FREDFET
Datasheet
APT56F50B2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 220nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8800pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 780W (Tc)
Rds On (Maximum) @ Id, Vgs 100 mOhm @ 28A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX [B2]
Package TO-247-3 Variant
Win Source Part Number 1146842-APT56F50B2
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Balance
Family Name APT56F50B2
Introduction Date January 09, 2006
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT56F50B2 CAD Model

Description

The APT56F50B2 is a power MOSFET transistor manufactured by Microsemi Corporation.

  • Series: POWER MOS 8
  • Package: TO-247-3 variant
  • Channel Type: N-channel
  • Maximum Drain-Source Voltage: 500V
  • Continuous Drain Current Rating @ 25°C: 56A
  • Gate Charge @ 10V: 220nC
  • Input Capacitance @ 25V: 8800pF
  • Maximum Power Dissipation @ Tc: 780W
  • Suitable For: Discrete semiconductor products
  • Introduction Date: January 2006
  • Estimated EOL Date: 2024

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