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Same model may have multiple batches, images only for reference.
APT6040BN
Same model may have multiple batches, images only for reference.

APT6040BN

Part No APT6040BN
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 18A TO247AD
Datasheet
APT6040BN Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 2950pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Dimension TO-247-3
Win Source Part Number 1018086-APT6040BN
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT6040BN CAD Model

Description

The APT6040BN is an N-Channel MOSFET manufactured by Microsemi Corporation.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 18A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 130nC @ 10V
  • Maximum Rds on: 400 mOhm @ 9A, 10V
  • Power Dissipation: 310W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package Type: TO-247AD
  • Mounting: Through Hole
  • Maximum Input Capacitance: 2950pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Status: Obsolete (EOL)

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