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APT80SM120J

Part No APT80SM120J
Manufacturer Microsemi Corporation
Catalog Transistors – FETs, MOSFETs – Single
Description SICFET N-CH 1200V 51A SOT227
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 20 V
Vgs (Max) +25V, -10V
Power Dissipation (Max) 273W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227
Package / Case SOT-227-4, miniBLOC
Ultra Librarian 3D Model Ultra Librarian APT80SM120J CAD Model

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