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Same model may have multiple batches, images only for reference.
JAN2N3019S Real Image
Same model may have multiple batches, images only for reference.

JAN2N3019S

Part No JAN2N3019S
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description LOW POWER NPN SILICON TRANSISTOR | TRANS NPN 80V 1A
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 1A
Voltage - Collector Emitter Breakdown (Maximum) 80V
Vce Saturation (Maximum) at Ib, Ic 500mV at 50mA, 500mA
Current - Collector Cutoff (Maximum) 10nA
DC Current Gain (hFE) (Minimum) at Ic, Vce 50 at 500mA, 10V
Maximum Power 800mW
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191384-JAN2N3019S
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian JAN2N3019S CAD Model

Description

The JAN2N3019S is a limited supply and demand status electronic component that is used in industrial applications.

  • Supply and Demand Status: Limited
  • Manufacturer: Microsemi Corporation
  • Win Source Part Number: 1191384
  • Packaging: Bulk
  • Mounting Style: Through Hole
  • Transistor Type: NPN
  • Application: Discrete Semiconductor Products
  • Supplier Device Package: TO-39
  • Temperature Range: -65°C to 200°C

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