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Same model may have multiple batches, images only for reference.
TK11A55D Real Image
Same model may have multiple batches, images only for reference.

TK11A55D

Part No TK11A55D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 11A TO-220SIS
Datasheet
TK11A55D Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 630 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 056643-TK11A55D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK11A55D CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET with the Win Source Part Number 056643-TK11A55D is an active product with a medium popularity.

  • Power Dissipation: The MOSFET has a maximum power dissipation of 45W (Tc) and a drain-source breakdown voltage of 550V.
  • Drain Current: It has a continuous drain current of 11A (Ta) @ 25°C and a gate-source threshold voltage of 4V @ 1mA.
  • Rds On: The maximum Rds On @ Id,Vgs is 630 mOhm @ 5.5A, 10V.
  • Package: The MOSFET is packaged in a TO-220SIS case and has a dimension of TO-220-3 Full Pack.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2740 $62.7400
23+ $5.1478 $118.3994
35+ $4.9873 $174.5555
48+ $4.8267 $231.6816
62+ $4.6650 $289.2300
83+ $4.1834 $347.2222
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