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Same model may have multiple batches, images only for reference.
JAN2N5664
Same model may have multiple batches, images only for reference.

JAN2N5664

Part No JAN2N5664
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 200V 5A TO66
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Active
Transistor Polarity NPN
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 200V
Max Vce (sat) 1V @ 5A, 1A
Collector Cut-off Current(Max) 200nA
Typical Gain (hFE) (Min) 40 @ 1A, 5V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -65°C to 200°C (TJ)
Mounting Through Hole
Case / Package TO-66 (TO-213AA)
Win Source Part Number 137147-JAN2N5664
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian JAN2N5664 CAD Model

Description

The Microsemi Corporation JAN2N5664 is a medium-popularity NPN transistor that comes in a TO-66 (TO-213AA) package. It has a maximum collector-emitter breakdown voltage of 200V and a maximum current collector of 5A.

  • Collector cut-off current (max): 200nA.
  • Typical gain (hFE) (min): 40 @ 1A and 5V.
  • Maximum power dissipation: 2.5W.
  • Operating temperature range: -65°C to 200°C.
  • Suitable for: use in various electronic applications that require an NPN transistor with a high collector-emitter breakdown voltage and maximum current collector.

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