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JAN2N5664

Part No JAN2N5664
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 200V 5A TO66
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Active
Transistor Polarity NPN
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 200V
Max Vce (sat) 1V @ 5A, 1A
Collector Cut-off Current(Max) 200nA
Typical Gain (hFE) (Min) 40 @ 1A, 5V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -65°C to 200°C (TJ)
Mounting Through Hole
Case / Package TO-66 (TO-213AA)
Win Source Part Number 137147-JAN2N5664
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian JAN2N5664 CAD Model

Description

The Microsemi Corporation JAN2N5664 is a medium-popularity NPN transistor that comes in a TO-66 (TO-213AA) package. It has a maximum collector-emitter breakdown voltage of 200V and a maximum current collector of 5A.

  • Collector cut-off current (max): 200nA.
  • Typical gain (hFE) (min): 40 @ 1A and 5V.
  • Maximum power dissipation: 2.5W.
  • Operating temperature range: -65°C to 200°C.
  • Suitable for: use in various electronic applications that require an NPN transistor with a high collector-emitter breakdown voltage and maximum current collector.

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