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JAN2N6788

Part No JAN2N6788
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO-205AF TO-39
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 800mW (Tc)
Maximum Rds On at Id,Vgs 350 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-39
Dimension TO-205AF Metal Can
Win Source Part Number 153128-JAN2N6788
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian JAN2N6788 CAD Model

Description

The Microsemi Corporation MOSFET 173003 is a through-hole N-channel polarity electronic component that is part of the Discrete Semiconductor Products category.

  • Maximum Power Dissipation: 800mW (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 6A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 350 mOhm @ 6A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 18nC @ 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: TO-39
  • Dimension: TO-205AF Metal Can
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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