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Same model may have multiple batches, images only for reference.
JANTX2N2919L
Same model may have multiple batches, images only for reference.

JANTX2N2919L

Part No JANTX2N2919L
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 60V 0.03A TO78 / Trans GP BJT NPN 60V 0.03A 6-Pin TO-78
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/355
Packaging Bulk
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Maximum) 30mA
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) @ Ib, Ic 300mV @ 100μA, 1mA
Current - Collector Cutoff (Maximum) 10μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 150 @ 1mA, 5V
Power - Max 350mW
Operating Temperature Range 200°C (TJ)
Mounting Style Through Hole
Package TO-78-6 Metal Can
Manufacturer Package TO-78-6
Win Source Part Number 777682-JANTX2N2919L
Popularity Medium
Supply and Demand Status Limited
Family Name 2N2919L
Introduction Date January 01, 2000
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian JANTX2N2919L CAD Model

Description

The JANTX2N2919L is a dual NPN transistor, manufactured by Microsemi Corporation.

  • Package: TO-78-6 Metal Can
  • Mounting Type: Through Hole
  • Maximum Collector-Emitter Breakdown Voltage: 60V
  • Collector Current: 30mA
  • DC Current Gain: 150 @ 1mA, 5V
  • Vce Saturation: 300mV @ 100μA, 1mA
  • Maximum Collector Cutoff: 10μA (ICBO)
  • Operating Temperature Range: 200°C (TJ)
  • Power Dissipation: 350mW
  • ECCN Compliance: EAR99

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