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Same model may have multiple batches, images only for reference.
JANTX2N6790 Real Image
Same model may have multiple batches, images only for reference.

JANTX2N6790

Part No JANTX2N6790
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.80ohm, Id=3.5A) | MOSFET N-CH TO-205AF TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 3.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 850mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14.3nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 800mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-39
Manufacturer Package TO-205AF Metal Can
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191525-JANTX2N6790
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTX2N6790 CAD Model

Description

The Microsemi Corporation MOSFET is a high-performance N-Channel transistor designed for use in various electronic applications.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 3.5A
  • Operating Temperature: -55°C to 150°C
  • Maximum Power Dissipation: 800mW
  • Package: TO-39
  • Mounting: Through Hole
  • Gate-Source Voltage: ±20V
  • Gate-Source Voltage(th): 4V @ 250μA
  • Gate Charge: 14.3nC @ 10V
  • Rds On (Maximum): 850mOhm @ 3.5A, 10V
  • Status: Obsolete
  • Supply and Demand Status: Limited

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20+ $5.8593 $117.1860
31+ $5.6761 $175.9591
43+ $5.4931 $236.2033
55+ $5.3100 $292.0500
73+ $4.7607 $347.5311
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Availability: 339 pieces
MOQ: 9 pcs
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