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Same model may have multiple batches, images only for reference.
JANTXV2N6798 Real Image
Same model may have multiple batches, images only for reference.

JANTXV2N6798

Part No JANTXV2N6798
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=5.5A) | MOSFET N-CH
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 5.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 420mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 42.07nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 800mW, 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-205AF (TO-39)
Manufacturer Package TO-205AF Metal Can
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191564-JANTXV2N6798
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTXV2N6798 CAD Model

Description

The 1191564-JANTXV2N6798 is a through-hole MOSFET transistor that belongs to the Discrete Semiconductor Products category manufactured by Microsemi Corporation.

  • Popularity: Medium
  • Supply and demand status: Limited
  • Maximum Power Dissipation: 800mW, 25W
  • Vds - Drain-Source Breakdown Voltage: 200V
  • Supplier Device Package: TO-205AF (TO-39)

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Quantity Unit Price Ext. Price
1+ $87.5883 $87.5883
2+ $71.8676 $143.7352
3+ $69.6211 $208.8633
4+ $67.3758 $269.5032
5+ $65.1293 $325.6465
6+ $58.3922 $350.3532
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