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2SA1365

Part No 2SA1365
Manufacturer Mitsubishi
Catalog OEM Parts (0 - 9)
Sample
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ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1036561-2SA1365
Categories OEM Parts(0-9)
Manufacturer Mitsubishi
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA1365 CAD Model

Description

The 2SA1365 is a PNP silicon epitaxial transistor manufactured by Mitsubishi. It is designed for high-frequency power amplifier applications. This transistor is commonly used in VHF and UHF power amplifiers, offering a good combination of power gain and efficiency.

Applications

  • VHF/UHF Power Amplifiers: Specifically designed for VHF and UHF power amplification.
  • RF Transmitters: Used in RF transmitters for signal amplification.
  • Communication Equipment: Employed in various communication systems requiring RF power amplification.
  • Mobile Radio: Utilized in mobile radio equipment for transmitting signals.

Features

  • Polarity: PNP
  • Collector-Emitter Voltage (Vceo): -30V
  • Collector Current (Ic): -2A
  • Power Dissipation (Pc): 7W
  • Transition Frequency (ft): 150 MHz
  • Package: TO-220 or similar package

Benefits

  • High-Frequency Performance: Suitable for VHF and UHF applications.
  • Good Power Gain: Provides significant power amplification.
  • Reliable Operation: Ensures stable and dependable performance.
  • Easy to Mount: The TO-220 package facilitates easy mounting and heat sinking.

Additional Details

The 2SA1365 transistor is typically packaged in a TO-220 or a similar package, allowing for efficient heat dissipation. Proper heat sinking is crucial to maintain stable operation, especially in high-power RF applications. The transistor's transition frequency (ft) indicates its capability to amplify high-frequency signals. The collector-emitter voltage and collector current ratings should be carefully considered to avoid exceeding the transistor's maximum limits. The 2SA1365 is often used in conjunction with an NPN transistor to form a push-pull amplifier configuration, improving linearity and output power. When designing with this transistor, impedance matching is critical to achieve optimal power transfer and minimize signal reflections. Biasing networks and feedback mechanisms are used to ensure stable operation and prevent thermal runaway. The device is used in land mobile radio, ham radio, and other communication systems.

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