The RD09MUP2-100 is a VHF/UHF power MOSFET manufactured by Mitsubishi Electric. It's designed for high-power amplifier applications in the VHF and UHF frequency ranges, offering high gain and efficiency.

Applications

• VHF/UHF power amplifiers for radio communication systems
• Base station transmitters
• Mobile radio transmitters
• Industrial heating equipment
• Medical equipment

Features

• High Gain: Typically 16 dB or higher at specified frequencies (Consult datasheet)
• High Efficiency: Typically 60% or higher at specified frequencies (Consult datasheet)
• High Output Power: Typically 9W at specified frequencies (Consult datasheet)
• Low Input Capacitance
• Internal Input Matching
• Gold Metallization for High Reliability

Benefits

• Provides high power amplification with excellent efficiency
• Reduces power consumption and heat dissipation
• Simplifies amplifier design with internal matching
• Offers long-term reliability
• Suitable for a wide range of VHF/UHF applications

Additional Details

The RD09MUP2-100 power MOSFET is designed for optimal performance in VHF/UHF applications. Its high gain and efficiency contribute to a reduction in overall system power consumption and heat generation. The internal input matching simplifies the design process, eliminating the need for external matching components in some applications.

Electrical Characteristics:

• Drain-Source Voltage (Vds): Consult datasheet for maximum Vds rating.
• Gate-Source Voltage (Vgs): Consult datasheet for maximum Vgs rating.
• Drain Current (Id): Consult datasheet for maximum Id rating.

Package Information:

• MUP (Mold Under-layed Package)
• Surface Mount Technology (SMT)