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NDP406BL

Part No NDP406BL
Manufacturer National Semiconductor (TI)
Catalog OEM Parts (M - N)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 986912-NDP406BL
Categories OEM Parts(M-N)
Manufacturer National Semiconductor (TI)
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian NDP406BL CAD Model

Description

The NDP406BL is an N-Channel enhancement mode field-effect transistor (MOSFET) manufactured by National Semiconductor, now part of Texas Instruments (TI). This MOSFET is designed for high-efficiency power switching applications.

Applications

  • DC-DC Converters: Used as switching elements in DC-DC converters.
  • Power Management Circuits: Controlling power distribution in various electronic devices.
  • Motor Control: Driving small DC motors in consumer and industrial applications.
  • Load Switching: Switching various loads on and off, such as LEDs or relays.
  • Battery Management Systems (BMS): Acting as a switch for charging and discharging batteries.

Features

  • N-Channel Enhancement Mode: Easy to drive with a positive gate voltage.
  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • High Current Capability: Can handle relatively high current loads.
  • Fast Switching Speed: Enables efficient switching in high-frequency applications.
  • Logic Level Compatible: Can be driven directly from logic level signals (e.g., 3.3V or 5V).

Benefits

  • High Efficiency: Low RDS(on) reduces power dissipation, improving overall efficiency.
  • Simple Drive Requirements: N-channel enhancement mode simplifies gate drive circuitry.
  • Compact Size: Available in surface-mount packages, saving board space.
  • Reliable Performance: Designed for robust and reliable operation in demanding environments.
  • Improved Thermal Performance: Efficiently dissipates heat, enhancing reliability.

Additional Details

The NDP406BL typically features a drain-source voltage (VDS) rating suitable for various applications. Its low gate charge contributes to faster switching speeds. The device is commonly available in a surface-mount package such as a SOT-223. This MOSFET is used in a wide range of applications due to its efficiency, ease of use, and reliability. Always refer to the datasheet for precise electrical characteristics, thermal performance, and recommended operating conditions. Parameters such as gate threshold voltage, maximum drain current, and power dissipation should be considered during the design phase to ensure optimal performance and prevent damage to the device.

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