The 2SB1151 is a PNP silicon transistor manufactured by NEC. It is designed for audio frequency power amplifier applications.

Applications:

• Audio power amplifiers.
• Driver stages in audio amplifiers.
• Switching circuits.
• General-purpose amplification.

Features:

• PNP silicon transistor.
• Low saturation voltage.
• High collector current capability.
• High power dissipation.
• TO-220 package.

Benefits:

• Provides high-quality audio amplification.
• Efficient power handling.
• Low distortion.
• Easy to mount and use.

Technical Specifications:

The 2SB1151 has a collector-base voltage (VCBO) of -60V. The collector-emitter voltage (VCEO) is -60V. The emitter-base voltage (VEBO) is -5V. The collector current (IC) is -8A. The collector power dissipation (PC) is 50W. The current gain (hFE) is typically 80 to 240. The operating temperature range is -55°C to +150°C. The package is TO-220.

This PNP silicon transistor is suitable for audio power amplifier applications requiring high performance and reliability.