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2SC1623-T1B-A(L5A)

Part No 2SC1623-T1B-A(L5A)
Manufacturer NEC
Catalog OEM Parts (0 - 9)
Sample
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RoHS Non-Compliant
Win Source Part Number 968252-2SC1623-T1B-A(L5A)
Categories OEM Parts(0-9)
Manufacturer NEC
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC1623-T1B-A(L5A) CAD Model

Description

The 2SC1623-T1B-A(L5A) is a silicon NPN epitaxial planar transistor manufactured by NEC. It is designed for use in low-noise amplifier applications, particularly in VHF (Very High Frequency) and UHF (Ultra High Frequency) bands. This transistor is commonly found in communication devices and various electronic instrumentation requiring high sensitivity.

Applications:

  • Low-Noise Amplifiers (LNA)
  • VHF/UHF Amplifiers
  • Oscillator Circuits
  • Mixer Stages
  • Communication Equipment

Features:

  • Low Noise Figure: Minimizes unwanted signal interference, providing clear signal amplification.
  • High Gain: Offers substantial signal amplification, enhancing the sensitivity of receiving circuits.
  • High Transition Frequency (fT): Enables operation in high-frequency applications, making it suitable for VHF and UHF bands.
  • Epitaxial Planar Construction: Ensures consistent performance and reliability.
  • NPN Silicon Transistor: A standard and widely used transistor type.

Benefits:

  • Improved Signal Clarity: Low noise figure ensures that the amplified signal remains clear and free from excessive noise.
  • Enhanced Receiver Sensitivity: High gain amplifies weak signals, improving the overall sensitivity of the receiving device.
  • Reliable Performance: Epitaxial planar construction provides consistent and stable operation over a wide range of conditions.
  • Versatile Application: Suitable for various high-frequency applications, simplifying design and inventory management.
  • Easy Integration: Standard NPN transistor configuration simplifies integration into existing circuits.

Additional Details:

The 2SC1623-T1B-A(L5A) is typically found in a surface-mount package, designed for easy mounting on printed circuit boards (PCBs). It operates with a collector-emitter voltage (VCEO) and collector current (IC) that are optimized for low-noise amplification. The device is characterized by its low noise figure, typically in the range of 1 to 2 dB at relevant frequencies. The transition frequency is in the GHz range. This transistor is optimized for applications requiring amplification of weak signals while minimizing added noise.

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