The 2SC3478-K is an NPN silicon epitaxial transistor manufactured by NEC. It is designed for use in various high-frequency amplifier applications and switching circuits. This transistor is characterized by its low noise figure and high gain, making it suitable for sensitive receiver front-ends and high-performance amplifier stages.

Applications

• RF Amplifiers
• Oscillators
• Mixers
• High-Frequency Switching Circuits
• Low-Noise Amplifiers (LNAs)

Features

• NPN Silicon Epitaxial Transistor
• Low Noise Figure
• High Gain
• High Transition Frequency
• Small Signal Amplifier

Benefits

• Improved Signal Reception: The low noise figure ensures that weak signals are amplified without significant degradation due to added noise.
• Enhanced Amplifier Performance: The high gain provides substantial signal amplification, improving the overall sensitivity and dynamic range of amplifier circuits.
• Efficient Switching: The transistor's characteristics enable efficient switching operation in high-frequency applications.
• Compact Design: The transistor's small size allows for compact circuit designs.
• Reliable Performance: Built with high-quality materials and manufacturing processes, ensuring stable and reliable operation.

Technical Specifications

While specific electrical characteristics like VCEO, IC, and fT can vary slightly, typically, the 2SC3478-K offers a collector-emitter voltage (VCEO) rating suitable for low-voltage applications, a collector current (IC) rating sufficient for small signal amplification, and a high transition frequency (fT) in the hundreds of MHz range, enabling its use in high-frequency circuits. The exact datasheet should be consulted for precise values.