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UPA1952TE

Part No UPA1952TE
Manufacturer NEC
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Rohs State Need to verify
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Manufacturer NEC
Win Source Part Number 389284-UPA1952TE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA1952TE CAD Model

Description

The UPA1952TE is a P-channel power MOSFET manufactured by Renesas (formerly NEC). It's designed for use in a variety of power management applications where efficiency and compact size are critical. The device features low on-resistance and gate charge, contributing to reduced power losses and faster switching speeds.

Applications

  • DC-DC Converters: Suitable for use in voltage regulators and power supplies.
  • Load Switching: Used to control power to various loads, such as LEDs and small motors.
  • Power Management in Portable Devices: Found in smartphones, tablets, and laptops for efficient power distribution.
  • Battery Management Systems (BMS): Employed in battery charging and discharging circuits.

Features

  • Low On-Resistance (Rds(on)): Reduces conduction losses, improving overall efficiency.
  • Low Gate Charge (Qg): Enables fast switching speeds and reduces switching losses.
  • P-Channel MOSFET: Simplifies high-side switching configurations.
  • Surface Mount Package: Allows for compact circuit designs and automated assembly.
  • Halogen-Free: Environmentally friendly design.

Benefits

  • Improved Energy Efficiency: Low on-resistance and gate charge minimize power consumption.
  • Faster Switching Speeds: Enables efficient operation in high-frequency applications.
  • Compact Design: Small surface mount package allows for high-density circuit layouts.
  • Simplified Circuit Design: P-channel configuration simplifies high-side switching.
  • Reduced Heat Dissipation: Lower power losses result in less heat generated.

Additional Details

The UPA1952TE's specifications include drain-source voltage (Vds), gate-source voltage (Vgs), and continuous drain current (Id) ratings. These parameters must be carefully considered to ensure safe and reliable operation. The power dissipation capability depends on the ambient temperature and thermal management techniques employed. Refer to the datasheet for detailed electrical characteristics, thermal resistance, and safe operating area (SOA) information. Appropriate heatsinking may be required to maintain the device within its operating temperature range.

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