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UPD41101G-1

Part No UPD41101G-1
Manufacturer NEC
Catalog HOT - SALES and EOL Components (U - Z)
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Manufacturer NEC
Win Source Part Number 391974-UPD41101G-1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPD41101G-1 CAD Model

Description

The UPD41101G-1 is a high-speed, 1,048,576-bit (1Mbit) Dynamic Random Access Memory (DRAM) manufactured by NEC. It is designed for applications requiring fast access times and moderate memory density. This DRAM offers a cost-effective solution for a variety of memory applications.

Applications:

  • Personal Computers: Used as main memory (RAM) in older PC systems.
  • Workstations: Incorporated into the memory architecture of early workstations.
  • Graphics Cards: Employed as video RAM (VRAM) in some graphics adapters.
  • Printers: Utilized in printer memory for raster image processing.
  • Industrial Control Systems: Integrated into embedded systems for data storage and processing.

Features:

  • Capacity: 1,048,576 bits (1Mbit)
  • Organization: Typically organized as 1M x 1 bit or 256K x 4 bits.
  • Access Time: Offers fast access times, usually in the range of 80ns to 120ns depending on the specific speed grade.
  • Refresh: Requires periodic refresh cycles to maintain data integrity.
  • Power Consumption: Operates at a standard 5V power supply and has relatively low power consumption compared to newer DRAM technologies.
  • Package: Available in various package types, including DIP (Dual In-line Package) and SOJ (Small Outline J-lead).

Benefits:

  • Cost-Effective: Provides a cost-efficient memory solution for applications where high density is not a primary requirement.
  • Fast Access: Enables quick data retrieval and storage, contributing to overall system performance.
  • Wide Availability: Although older technology, it may still be available for legacy systems or specific applications.
  • Simple Interface: Easy to interface with older microprocessors and memory controllers.

Additional Details:

The UPD41101G-1 DRAM utilizes multiplexed address inputs to reduce the number of address lines required. This is a common technique used in DRAM designs to conserve pins. It requires a refresh cycle to maintain data integrity, typically performed every few milliseconds. The operating temperature range is usually between 0°C and 70°C. The device is sensitive to electrostatic discharge (ESD) and requires careful handling during installation and operation. Consult the manufacturer's datasheet for precise specifications and operating conditions.

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