The UPD434001LE-20 is a 4Mbit high-speed CMOS Dynamic RAM (DRAM) manufactured by NEC. It is organized as 4,194,304 words × 1 bit and is designed for memory applications requiring fast access times and low power consumption.

Applications:

• Main memory in embedded systems
• Cache memory
• Frame buffers in graphics cards
• Digital signal processing (DSP) applications
• High-performance computing

Features:

• High speed: 20ns access time
• 4Mbit capacity (4,194,304 words × 1 bit)
• CMOS technology for low power consumption
• Single 5V power supply
• TTL compatible inputs and outputs
• Refresh modes: Read modify write
• Package: DIP

Benefits:

• Fast data access allows for high-performance system operation.
• Low power consumption reduces heat generation and extends battery life in portable applications.
• High storage density reduces board space requirements.
• Easy to interface with TTL logic.
• Reliable operation due to robust design and manufacturing.

Additional Details:

The UPD434001LE-20 DRAM operates from a single 5V power supply, simplifying system design. It features TTL compatible inputs and outputs, which enables easy integration with other digital components. The refresh modes such as Read modify write helps in reducing memory access time and power consumption. This DRAM is available in DIP package.

Key Specifications:

• Access time: 20 ns
• Organization: 4,194,304 words × 1 bit
• Power supply voltage: 5V
• Operating temperature: 0°C to +70°C
• Package: DIP