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NJG1717KT1-TE1

Part No NJG1717KT1-TE1
Manufacturer New Japan Radio
Catalog RF Amplifiers
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1082137-NJG1717KT1-TE1
Categories RF Amplifiers
Manufacturer New Japan Radio
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian NJG1717KT1-TE1 CAD Model

Description

The NJG1717KT1-TE1 is a GaAs MMIC SPDT (Single Pole Double Throw) switch designed for high-frequency applications. This switch offers excellent performance characteristics, including low insertion loss and high isolation, making it suitable for various wireless communication systems.

Applications

  • Wireless LAN (WLAN) IEEE 802.11 a/b/g/n/ac
  • Bluetooth
  • Cellular communication systems (e.g., GSM, UMTS, LTE)
  • RF front-end modules for mobile devices
  • Test and measurement equipment

Features

  • High isolation: Provides excellent signal isolation between the two output ports.
  • Low insertion loss: Minimizes signal attenuation when the switch is in the 'on' state.
  • Fast switching speed: Allows for quick transitions between the two output paths.
  • Small package: Available in a compact package suitable for space-constrained applications.
  • Single positive control voltage: Simplifies the control circuitry.

Benefits

  • Improved system performance: Enhances overall signal quality and reduces interference.
  • Reduced power consumption: Low insertion loss contributes to minimizing power dissipation.
  • Increased design flexibility: Allows for versatile switching configurations in RF systems.
  • Simplified PCB layout: The compact package facilitates easy integration.
  • Cost-effective solution: Provides a good balance of performance and cost.

Additional Details

The NJG1717KT1-TE1 operates with a single positive control voltage. The control voltage determines which of the two output paths is active. The device is typically supplied in tape and reel packaging for automated assembly. It is designed for frequencies typically used in WLAN and cellular bands. The GaAs MMIC technology used in its construction contributes to its high-frequency performance and reliability.

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