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Same model may have multiple batches, images only for reference.
BC807-40QAZ Real Image
Same model may have multiple batches, images only for reference.

BC807-40QAZ

Part No BC807-40QAZ
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS PNP 45V 0.5A DFN1010D-3  /  Bipolar (BJT) Transistor PNP 45 V 500 mA 80MHz 900 mW Surface Mount DFN1010D-3
Datasheet
BC807-40QAZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 1V
Power - Max 900 mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3
Base Product Number BC807
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 568-12525-6,1727-2242-6,BC807-40QAZ-ND,1727-2242-2,1727-2242-1,934067157147,568-12525-6-ND,568-12525-2-ND,568-12525-1,568-12525-1-ND
Standard Package 5,000
Win Source Part Number 971582-BC807-40QAZ
Ultra Librarian 3D Model Ultra Librarian BC807-40QAZ CAD Model

Description

The Nexperia BC807-40QAZ is a PNP bipolar (BJT) single transistor.

  • Power - Max: 900 mW
  • Voltage - Collector Emitter Breakdown (max): 45 V
  • Current - Collector (Ic) (max): 500 mA
  • Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • DC Current Gain (hFE) (min) @ Ic, Vce: 40 @ 500mA, 1V
  • Frequency - Transition: 80MHz
  • Package: 3-XDFN exposed pad
  • Mounting: SMD (SMT)

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