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BC847AQAZ

Part No BC847AQAZ
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS NPN 45V 0.1A DFN1010D-3  /  Bipolar (BJT) Transistor NPN 45 V 100 mA 100MHz 280 mW Surface Mount DFN1010D-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V
Power - Max 280 mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3
Base Product Number BC847
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 1727-2545-2,568-12984-6,1727-2545-1,568-12984-6-ND,568-12984-2,568-12984-1-ND,1727-2545-6,568-12984-2-ND,934069066147,568-12984-1,BC847AQAZ-ND
Standard Package 5,000
Win Source Part Number 1048405-BC847AQAZ
Ultra Librarian 3D Model Ultra Librarian BC847AQAZ CAD Model

Description

The Nexperia USA Inc. BC847AQAZ is an NPN bipolar transistor with a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA.

  • Power Rating: 280mW
  • Frequency Transition: 100MHz
  • DC Current Gain: 110 @ 2mA and 5V
  • Vce Saturation: 400mV @ 5mA, 100mA
  • Mounting: Surface-mounting
  • Package: Standard package of 5,000
  • Application: Discrete semiconductor products such as transistors
  • Ideal for: Automotive applications that require a high-temperature range of 150°C (TJ)

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