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Same model may have multiple batches, images only for reference.
PUMD2,165 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PUMD2,165

Part No PUMD2,165
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP 6TSSOP
Datasheet
PUMD2,165 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 60 @ 5mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1090712-PUMD2,165
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PUMD2,165 CAD Model

Description

The Nexperia USA Inc. PUMD2,165 is a dual NPN and PNP transistor that is pre-biased.

  • Package: 6-TSSOP
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 150mV @ 500μA, 10mA
  • Collector Cut-Off Current(Max): 1μA
  • Typical Gain (hFE) (Min): 60 @ 5mA, 5V
  • Maximum Power Dissipation: 300mW
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Limited

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