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Same model may have multiple batches, images only for reference.
BCV29,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BCV29,115

Part No BCV29,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 30V 0.5A SOT89
Datasheet
BCV29,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 1V @ 100μA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 20000 @ 100mA, 5V
Maximum Power Dissipation 1.3W
Frequency - Transition 220MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 1022748-BCV29,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCV29,115 CAD Model

Description

The Nexperia USA Inc. BCV29,115 is an NPN - Darlington transistor polarity discrete semiconductor product mounted in SMD (SMT) packaging.

  • Maximum Current Collector: 500mA
  • Maximum Collector-Emitter Breakdown Voltage: 30V
  • Maximum Power Dissipation: 1.3W
  • Typical Gain (hFE) (Min): 20000 @ 100mA, 5V
  • Maximum Vce (sat): 1V @ 100μA, 100mA
  • Collector Cut-Off Current(Max): 100nA (ICBO)
  • Temperature Range: 150°C (TJ)

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116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
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