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BSS138P,215

Part No BSS138P,215
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 360MA TO-236AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.8nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 350mW (Ta), 1.14W (Tc)
Maximum Rds On at Id,Vgs 1.6 Ohm @ 300mA, 10V
Temperature Range - Operating -55°C to 150°C (TA)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024497-BSS138P,215
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS138P,215 CAD Model

Description

The BSS138P,215 is a N-channel MOSFET transistor that is designed for use in a variety of electronic applications.

  • Manufacturer: Nexperia
  • Maximum Power Dissipation: 350mW (Ta), 1.14W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 360mA (Ta)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 0.8nC @ 4.5V
  • Package: TO-236AB (SOT23)

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,490+ $0.0336 $50.0640
3,185+ $0.0314 $100.0090
4,935+ $0.0304 $150.0240
7,095+ $0.0282 $200.0790
9,195+ $0.0272 $250.1040
11,495+ $0.0261 $300.0195
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Availability: 600,000 pieces
MOQ: 1490 pcs
Order Increment : 1 pcs
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