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Same model may have multiple batches, images only for reference.
BST61,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BST61,115

Part No BST61,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP DARL 60V 1A SOT89
Datasheet
BST61,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Darlington
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 1.3V @ 500μA, 500mA
Collector Cut-off Current(Max) 50nA
Typical Gain (hFE) (Min) 2000 @ 500mA, 10V
Maximum Power Dissipation 1.3W
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 1024548-BST61,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BST61,115 CAD Model

Description

The Nexperia USA Inc. BST61,115 is a PNP-Darlington transistor that offers a maximum current collector of 1A and a VCEO maximum collector-emitter breakdown voltage of 60V.

  • Type: PNP-Darlington Transistor
  • Maximum Collector Current: 1A
  • Collector-Emitter Breakdown Voltage (VCEO): 60V
  • Maximum Power Dissipation: 1.3W
  • Package: SOT-89-3
  • Gain (hFE) (Min): 2000 @ 500mA, 10V
  • Frequency-Transition: 200MHz
  • Applications: Audio Amplifiers and Switching Circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.2078 $58.1840
680+ $0.1706 $116.0080
1,050+ $0.1652 $173.4600
1,450+ $0.1599 $231.8550
1,870+ $0.1545 $288.9150
2,500+ $0.1386 $346.5000
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