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Same model may have multiple batches, images only for reference.
BUK6607-55C,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK6607-55C,118

Part No BUK6607-55C,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 100A D2PAK
Datasheet
BUK6607-55C,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 5160pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 158W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025175-BUK6607-55C,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK6607-55C,118 CAD Model

Description

The BUK6607-55C,118 from Nexperia USA Inc. is an N-Channel MOSFET with a drain-source breakdown voltage of 55V.

  • Drain-Source Breakdown Voltage: 55V
  • Maximum Power Dissipation: 158W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Rds On: 6.5 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 2.8V @ 1mA
  • Package: D2PAK
  • Mounting Type: SMD (SMT)
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7586 $61.5510
85+ $1.4431 $122.6635
125+ $1.3979 $174.7375
175+ $1.3529 $236.7575
225+ $1.3077 $294.2325
300+ $1.1725 $351.7500
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Availability: 2,000 pieces
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