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Same model may have multiple batches, images only for reference.
BUK664R4-55C,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK664R4-55C,118

Part No BUK664R4-55C,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 100A D2PAK
Datasheet
BUK664R4-55C,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 124nC @ 10V
Max Input Capacitance 7750pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 204W (Tc)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025178-BUK664R4-55C,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK664R4-55C,118 CAD Model

Description

The Nexperia USA Inc. BUK664R4-55C,118 is an N-channel MOSFET that is perfect for use in various electronic applications.

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 100A (Tc)
  • Gate-Source Threshold Voltage: 2.8V @ 1mA
  • Maximum Gate Charge: 124nC @ 10V
  • Maximum Input Capacitance: 7750pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On @ Id,Vgs: 4.9 mOhm @ 25A, 10V
  • Packaging: Reel
  • Mounting: SMD (SMT)
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: D2PAK
  • Popularity: Popular
  • Supply and Demand Status: Balanced

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