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Same model may have multiple batches, images only for reference.
BUK761R6-40E,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK761R6-40E,118

Part No BUK761R6-40E,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A D2PAK
Datasheet
BUK761R6-40E,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 145nC @ 10V
Max Input Capacitance 11340pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 349W (Tc)
Maximum Rds On at Id,Vgs 1.6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025260-BUK761R6-40E,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK761R6-40E,118 CAD Model

Description

The Nexperia USA Inc. BUK761R6-40E,118 is a surface mount N-channel MOSFET in a D2PAK package.

  • Manufacturer: Nexperia USA Inc.
  • Mounting: Surface mount
  • Type: N-channel MOSFET
  • Package: D2PAK
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 120A @ 25°C
  • Maximum Rds On: 1.6 mOhm @ 25A, 10V
  • Drive Voltage: 10V
  • Max Input Capacitance: 11340pF @ 25V
  • Max Gate Charge: 145nC @ 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Use: Suitable for use in discrete semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.3798 $61.3172
33+ $3.5944 $118.6152
50+ $3.4823 $174.1150
69+ $3.3691 $232.4679
89+ $3.2571 $289.8819
119+ $2.9198 $347.4562
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