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Same model may have multiple batches, images only for reference.
BUK9508-55B,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK9508-55B,127

Part No BUK9508-55B,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO220AB
Datasheet
BUK9508-55B,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 45nC @ 5V
Max Input Capacitance 5280pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 203W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025338-BUK9508-55B,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUK9508-55B,127 CAD Model

Description

The BUK9508-55B,127 is an N-Channel MOSFET designed for use in discrete semiconductor products from Nexperia.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 75A (Tc)
  • Maximum Power Dissipation: 203W (Tc)
  • Maximum Rds On @ Id,Vgs: 7 mOhm @ 25A, 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Package: TO-220AB
  • Mounting: through-hole technology
  • Maximum Input Capacitance: 5280pF @ 25V
  • Maximum Gate-Source Voltage: ±15V
  • Status: obsolete (EOL)

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Quantity Unit Price Ext. Price
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30+ $3.9097 $117.2910
46+ $3.7884 $174.2664
64+ $3.6660 $234.6240
82+ $3.5435 $290.5670
110+ $3.1774 $349.5140
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