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Same model may have multiple batches, images only for reference.
BUK9520-100B,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK9520-100B,127

Part No BUK9520-100B,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 63A TO220AB
Datasheet
BUK9520-100B,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 53.4nC @ 5V
Max Input Capacitance 5657pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 203W (Tc)
Maximum Rds On at Id,Vgs 18.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025350-BUK9520-100B,127
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian BUK9520-100B,127 CAD Model

Description

The Nexperia USA Inc. BUK9520-100B,127 is a N-Channel MOSFET transistor that has a maximum power dissipation of 203W (Tc).

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 63A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate Charge: 53.4nC @ 5V
  • Maximum Input Capacitance: 5657pF @ 25V
  • Maximum Rds On at Id,Vgs: 18.5 mOhm @ 25A, 10V
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Category: Discrete semiconductor products
  • Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Sufficient
  • Quantity per Package: 50

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