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Same model may have multiple batches, images only for reference.
BUK953R5-60E,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK953R5-60E,127

Part No BUK953R5-60E,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO220AB
Datasheet
BUK953R5-60E,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.1V @ 1mA
Max Gate Charge 95nC @ 5V
Max Input Capacitance 13490pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 293W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025359-BUK953R5-60E,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUK953R5-60E,127 CAD Model

Description

The Nexperia USA Inc. MOSFET transistor is a high-performance device with a maximum power dissipation of 293W (Tc).

  • Maximum Power Dissipation: 293W (Tc)
  • Channel Type: N-channel
  • Mounting Type: through hole
  • Drive Voltage: 5V
  • Minimum Rds On: 10V
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Package/Case: TO-220AB
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 120A (Tc)
  • Gate-Source Threshold Voltage: 2.1V @ 1mA
  • Maximum Gate Charge: 95nC @ 5V
  • Popularity: popular in the market
  • Supply and Demand Status: sufficient

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