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Same model may have multiple batches, images only for reference.
BUK966R5-60E,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK966R5-60E,118

Part No BUK966R5-60E,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A D2PAK
Datasheet
BUK966R5-60E,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2.1V @ 1mA
Max Gate Charge 48nC @ 5V
Max Input Capacitance 6900pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 182W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025399-BUK966R5-60E,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK966R5-60E,118 CAD Model

Description

The BUK966R5-60E,118 from Nexperia USA Inc. is a discrete semiconductor product that comes in a D2PAK package.

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 75A (Tc)
  • Gate-Source Threshold Voltage: 2.1V @ 1mA
  • Maximum Gate Charge: 48nC @ 5V
  • Maximum Input Capacitance: 6900pF @ 25V
  • Maximum Rds On @ Id,Vgs: 5.9 mOhm @ 25A, 10V
  • Status: Active
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation (max): 182W (Tc)
  • Supply and Demand Status: Balanced

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