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Same model may have multiple batches, images only for reference.
BUK969R0-60E,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK969R0-60E,118

Part No BUK969R0-60E,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A D2PAK
Datasheet
BUK969R0-60E,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2.1V @ 1mA
Max Gate Charge 29.8nC @ 5V
Max Input Capacitance 4350pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 137W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025403-BUK969R0-60E,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK969R0-60E,118 CAD Model

Description

The Nexperia USA Inc. BUK969R0-60E,118 is an N-channel MOSFET that has a drain-source breakdown voltage of 60V and a continuous drain current of 75A @ 25 degrees Celsius.

  • Manufacturer: Nexperia USA Inc.
  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 75A @ 25 degrees Celsius
  • Maximum Power Dissipation: 137W
  • Gate-Source Threshold Voltage: 2.1V @ 1mA
  • Package: D2PAK
  • Operating Temperature Range: -55 to 175 degrees Celsius
  • Status: Balanced supply and demand status
  • Packaging: Reel - TR
  • Use: Ideal for various applications in discrete semiconductor products.

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Quantity Unit Price Ext. Price
45+ $1.2385 $55.7325
100+ $1.0163 $101.6300
155+ $0.9845 $152.5975
210+ $0.9527 $200.0670
275+ $0.9210 $253.2750
365+ $0.8257 $301.3805
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