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Same model may have multiple batches, images only for reference.
PUMD10,125
Same model may have multiple batches, images only for reference.

PUMD10,125

Part No PUMD10,125
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS 1NPN 1PNP 6TSSOP / Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200mW Surface Mount 6-TSSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA
Power - Max 200mW
Mounting Surface Mount
Case / Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Base Product Number PUMD10
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number 1727-8545-1,1727-8545-2,934055239125,PUMD10,125-ND,1727-8545-6
Standard Package 3,000
Win Source Part Number 1325044-PUMD10,125
Ultra Librarian 3D Model Ultra Librarian PUMD10,125 CAD Model

Description

The Nexperia USA Inc. PUMD10,125 is a pre-biased bipolar transistor array.

  • Maximum Power Dissipation: 200mW
  • Maximum Collector-Emitter Voltage: 50V
  • Transistor Configuration: One NPN and one PNP pre-biased transistors
  • Vce Saturation: 100mV @ 5mA
  • DC Current Gain: 100 @ 10mA
  • Applications: Amplification, Switching, and Voltage Regulation
  • Mounting: Surface Mount
  • Package: 6-TSSOP

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