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Same model may have multiple batches, images only for reference.
NX3008PBKV,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

NX3008PBKV,115

Part No NX3008PBKV,115
Manufacturer Nexperia USA Inc.
Catalog TRANSISTORS
Description MOSFETs 30 V, 230 mA P-channel Trench MOSFET
Datasheet
NX3008PBKV,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Nexperia
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-666-6
Transistor Polarity P-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 220 mA
Rds On - Drain-Source Resistance 2.8 Ohms
Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 900 mV
Qg - Gate Charge 550 pC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.09 W
Channel Mode Enhancement
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Brand Nexperia
Product Type MOSFETs
Standard Pack Qty 4000
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian NX3008PBKV,115 CAD Model

Description

The Nexperia USA Inc. NX3008PBKV,115 is a 2 P-Channel (Dual) FET that is designed for use in Discrete Semiconductor Products.

  • Channels: 2 P-Channel (Dual)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 220mA @ 25°C
  • Gate-Source Threshold Voltage: 1.1V @ 250μA
  • Maximum Gate Charge: 0.72nC @ 4.5V
  • Maximum Rds On: 4.1 Ohm @ 200mA, 4.5V
  • Mounting Technology: SMD (SMT)
  • Package: SOT-666
  • Supply and Demand Status: Balanced
  • Component Type: Discrete Semiconductor Products

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