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Same model may have multiple batches, images only for reference.
NXP3875GR Real Image
Same model may have multiple batches, images only for reference.

NXP3875GR

Part No NXP3875GR
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS NPN 50V 0.15A TO236AB  /  Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 200 mW Surface Mount TO-236AB
Datasheet
NXP3875GR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Transistor Type NPN
Current - Collector (Ic) (Max) 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 200 mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB
Base Product Number NXP3875
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 934067239215
Standard Package 3,000
Win Source Part Number 1083040-NXP3875GR
Ultra Librarian 3D Model Ultra Librarian NXP3875GR CAD Model

Description

The NXP3875GR is a high performance NPN bipolar transistor designed for use in automotive applications.

  • Collector-Emitter Voltage Breakdown: 50V
  • Maximum Collector Current: 150mA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Power Dissipation: Up to 200mW
  • DC Current Gain: 200 @ 2mA and 6V
  • Vce Saturation: 250mV @ 10mA and 100mA
  • Current-Cutoff: 100nA
  • Frequency Transition: 80MHz

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