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Same model may have multiple batches, images only for reference.
PBLS2021D,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBLS2021D,115

Part No PBLS2021D,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN PREBIAS/PNP 6TSOP
Datasheet
PBLS2021D,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN Pre-Biased, 1 PNP
Maximum Current Collector 100mA, 1.8A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 20V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V / 200 @ 1A, 2V
Max Vce (sat) 150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A
Collector Cut-off Current(Max) 1μA, 100nA
Frequency - Transition 130MHz
Maximum Power Dissipation 760mW
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086366-PBLS2021D,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBLS2021D,115 CAD Model

Description

The PBLS2021D,115 is a transistor manufactured by Nexperia USA Inc.

  • Frequency Transition: 130MHz
  • Transistor Configuration: 1 NPN pre-biased and 1 PNP transistor
  • Maximum Current Collector: 100mA and 1.8A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V and 20V
  • Collector Cut-Off Current: 1μA and 100nA
  • Typical Gain: 30 @ 20mA and 5V and 200 @ 1A and 2V
  • Maximum Power Dissipation: 760mW

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